Pseudomorphic growth and strain relaxation of α-Zn3P2 on GaAs(001) by molecular beam epitaxy
نویسندگان
چکیده
Tetragonal zinc phosphide (a-Zn3P2) was grown pseudomorphically, by compound-source molecularbeam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn3P2(004):GaAs(002) and Zn3P2(202):GaAs(111). Partial relaxation of the Zn3P2 lattice was observed for films that were 4150 nm in thickness. Van der Pauw and Hall effect measurements indicated that carrier mobilities in strained films (440 cm V s ) were comparable to the carrier mobilities that have been reported for bulk Zn3P2 single crystals. The carrier densities and mobilities of holes decreased significantly upon film relaxation, consistent with the evolution of compensating disloca-
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